N-channel, small-signal MOSFET in a TSOP package, designed for general-purpose applications. Features a continuous drain current of 4.6A and a drain-to-source breakdown voltage of 30V. Offers a low drain-source on-resistance of 34mΩ at a nominal gate-source voltage of 600mV. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. This surface-mount component boasts fast switching times, including a turn-on delay of 21ns and a fall time of 30ns.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.14W
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Technical Specifications
Vishay SI3434DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
4.6A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
34mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
34mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
12V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
600mV
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.14W
Radiation Hardening
No
Rds On Max
34mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
40ns
Turn-On Delay Time
21ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI3434DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3434DV-T1-E3 to view detailed technical specifications.
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