N-CHANNEL MOSFET, 40V Drain-Source Voltage, 5.5A Continuous Drain Current, and 35.5mΩ Max Drain-Source On-Resistance. Features 3.5W Max Power Dissipation and a TSOP package for surface mounting. Ideal for applications requiring efficient switching with a 10ns fall time and 16ns turn-on/turn-off delay times. Operates across a wide temperature range from -55°C to 150°C.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3438DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Resistance | 35.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 35.5mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.000705oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3438DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3438DV-T1-GE3 to view detailed technical specifications.
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