P-channel MOSFET, 20V Drain-Source Voltage (Vdss), 2.45A Continuous Drain Current (ID). Features 90mΩ maximum Drain-Source On Resistance (Rds On) and 860mW power dissipation. Surface mount TSOP package with 55ns fall time and 15ns turn-on delay. Operating temperature range from -55°C to 150°C.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power860mW
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Technical Specifications
Vishay SI3441BDV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.45A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
90mR
Dual Supply Voltage
-20V
Fall Time
55ns
Gate to Source Voltage (Vgs)
8V
Height
0.039inch
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
860mW
Mount
Surface Mount
Nominal Vgs
-850mV
Number of Elements
1
On-State Resistance
130mR
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
860mW
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
Unknown
Reverse Recovery Time
50ns
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
-850mV
Turn-Off Delay Time
30ns
Turn-On Delay Time
15ns
Width
3mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3441BDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3441BDV-T1-E3 to view detailed technical specifications.
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