P-channel, small-signal MOSFET with a continuous drain current of 2.45A and a drain-to-source voltage of -20V. Features low on-resistance of 90mΩ, ideal for general-purpose switching applications. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 860mW. Packaged in a compact TSOP-6 surface-mount case, this component is halogen-free and RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3441BDV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.45A |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 860mW |
| Mount | Surface Mount |
| Nominal Vgs | -850mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -850mV |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 15ns |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3441BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3441BDV-T1-GE3 to view detailed technical specifications.
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