P-channel, small-signal MOSFET with a continuous drain current of 2.45A and a drain-to-source voltage of -20V. Features low on-resistance of 90mΩ, ideal for general-purpose switching applications. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 860mW. Packaged in a compact TSOP-6 surface-mount case, this component is halogen-free and RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3441BDV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.45A
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
40ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
860mW
Mount
Surface Mount
Nominal Vgs
-850mV
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-850mV
Turn-Off Delay Time
30ns
Turn-On Delay Time
15ns
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3441BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3441BDV-T1-GE3 to view detailed technical specifications.
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