P-channel, general-purpose small-signal MOSFET featuring a 3.6A continuous drain current and a -20V drain-source voltage. This surface-mount device offers a low 60mΩ drain-source on-resistance and operates within a -55°C to 150°C temperature range. With a 1.1W maximum power dissipation and a TSOP package, it is designed for efficient switching applications. RoHS compliant with tin-matte contact plating.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI3443BDV-T1-E3 technical specifications.
General
Package/Case
TSOP
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
3.6A
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
60mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
12V
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Moisture Sensitivity Level
1
Mount
Surface Mount
Nominal Vgs
-1.4V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
60mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
22ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3443BDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3443BDV-T1-E3 to view detailed technical specifications.
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