P-channel, small-signal MOSFET designed for general-purpose applications. Features a continuous drain current of 4.7A and a drain-source voltage of -20V. Offers a low drain-source on-resistance of 50mΩ at a nominal gate-source voltage of -600mV. Packaged in a compact TSOP surface-mount case with dimensions of 3.05mm x 1.65mm x 1mm. Operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 3.2W. This component is RoHS compliant and halogen-free.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Vishay SI3443CDV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
4.7A
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
60mR
Fall Time
11ns
Gate to Source Voltage (Vgs)
12V
Height
1mm
Input Capacitance
305pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Nominal Vgs
-600mV
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
50mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-600mV
Turn-Off Delay Time
30ns
Turn-On Delay Time
27ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3443CDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3443CDV-T1-GE3 to view detailed technical specifications.
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