P-channel, small-signal MOSFET designed for general-purpose applications. Features a continuous drain current of 4.7A and a drain-source voltage of -20V. Offers a low drain-source on-resistance of 50mΩ at a nominal gate-source voltage of -600mV. Packaged in a compact TSOP surface-mount case with dimensions of 3.05mm x 1.65mm x 1mm. Operates within a temperature range of -55°C to 150°C and supports a maximum power dissipation of 3.2W. This component is RoHS compliant and halogen-free.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Vishay SI3443CDV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 60mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 305pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Nominal Vgs | -600mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -600mV |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 27ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3443CDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3443CDV-T1-GE3 to view detailed technical specifications.
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