N-channel Si MOSFET, TrenchFET® series, for general-purpose small signal applications. Features 20V Drain-Source Voltage (Vdss) and 5.8A Continuous Drain Current (ID). Offers low 37mR Drain-Source On-Resistance (Rds On Max) and 640pF input capacitance. Packaged in a compact TSOP surface-mount case, this RoHS compliant component operates from -55°C to 150°C with a 2W maximum power dissipation.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3446ADV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
5.8A
Drain to Source Resistance
37mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
37MR
Fall Time
10ns
Gate to Source Voltage (Vgs)
12V
Height
1mm
Input Capacitance
640pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
37mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
25ns
Turn-On Delay Time
50ns
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3446ADV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3446ADV-T1-E3 to view detailed technical specifications.
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