N-channel MOSFET in a TSOP package, featuring a 20V drain-to-source breakdown voltage and 5.8A continuous drain current. Offers low 37mR drain-to-source resistance at a nominal gate-to-source voltage of 1.8V. This surface mount component boasts a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 10ns fall time and 24ns turn-off delay time.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay SI3446ADV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 640pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 37mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3446ADV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3446ADV-T1-GE3 to view detailed technical specifications.
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