P-channel MOSFET for surface mount applications, featuring a 12V drain-source voltage and 4.5A continuous drain current. Offers a low drain-source on-resistance of 40mR at a nominal gate-source voltage of -1V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.1W. This component is RoHS compliant and supplied in tape and reel packaging.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI3447BDV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
4.5A
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
40mR
Dual Supply Voltage
-12V
Fall Time
46ns
Gate to Source Voltage (Vgs)
8V
Height
0.039inch
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Nominal Vgs
-1V
Number of Elements
1
On-State Resistance
53mR
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
Unknown
Reverse Recovery Time
40ns
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
-1V
Turn-Off Delay Time
62ns
Turn-On Delay Time
20ns
Width
3mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3447BDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3447BDV-T1-E3 to view detailed technical specifications.
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