P-channel MOSFET with 12V drain-source breakdown voltage and 4.5A continuous drain current. Features 40mΩ drain-source resistance at 4.5V gate-source voltage and 20ns turn-on delay. Surface mountable in a TSOP package, this component offers 1.1W maximum power dissipation and operates across a -55°C to 150°C temperature range. RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
Quick Jump:
Technical Specifications
Vishay SI3447BDV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 62ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3447BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3447BDV-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.