Vishay
SI3455DV-T1
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
PackageTSOP
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3455DV-T1 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
3.5A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
RoHS Compliant
No
Series
SI3
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI3455DV-T1 Datasheet
Download the complete datasheet for Vishay SI3455DV-T1 to view detailed technical specifications.
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