N-channel MOSFET transistor, surface mountable in a 6-pin TSOP package. Features a 30V drain-to-source breakdown voltage and a continuous drain current of 4.5A. Offers a low Rds(on) of 35mR, with fast switching times including a 10ns turn-on delay and 15ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.1W. RoHS compliant and lead-free.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI3456BDV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
0.039inch
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
35mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
Width
0.067inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI3456BDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3456BDV-T1-E3 to view detailed technical specifications.
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