N-channel MOSFET with 30V drain-source voltage and 7.7A continuous drain current. Features low 34mΩ drain-to-source resistance and 460pF input capacitance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 3.3W. Packaged in a 6-lead TSOP for surface mounting, this component offers fast switching with turn-on delay of 20ns and fall time of 10ns.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3456CDV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
7.7A
Drain to Source Resistance
34mR
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
460pF
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.3W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
34mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
15ns
Turn-On Delay Time
20ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3456CDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3456CDV-T1-E3 to view detailed technical specifications.
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