N-channel MOSFET with 30V Drain-Source Voltage (Vdss) and 5A Continuous Drain Current (ID). Features low 40mΩ Drain-Source On-Resistance (Rds On Max) and 1.7W Power Dissipation. Operates from -55°C to 150°C, with 12ns Turn-On Delay Time and 13ns Fall Time. Packaged in a compact 6-pin TSOP for surface mounting.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.7W
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Technical Specifications
Vishay SI3456DDV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
5A
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
40mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
325pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.7W
Radiation Hardening
No
Rds On Max
40mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
16ns
Turn-On Delay Time
12ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3456DDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3456DDV-T1-E3 to view detailed technical specifications.
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