P-channel MOSFET with 30V drain-source breakdown voltage and 3.7A continuous drain current. Features low 54mΩ drain-to-source resistance at a nominal gate-source voltage of -3V. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 1.14W. Packaged in a 6-TSOP surface-mount case, supplied on tape and reel.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.14W
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Technical Specifications
Vishay SI3457BDV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 54mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Mount | Surface Mount |
| Nominal Vgs | -3V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.14W |
| Radiation Hardening | No |
| Rds On Max | 54mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3457BDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3457BDV-T1-GE3 to view detailed technical specifications.
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