P-Channel MOSFET with 30V Drain-Source Voltage and 5.1A Continuous Drain Current. Features low 74mΩ Drain-Source On-Resistance and 450pF Input Capacitance. Operates within -55°C to 150°C, with 3W Max Power Dissipation. Packaged in a 6-TSOP surface mount for tape and reel distribution.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI3457CDV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Resistance | 74mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 450pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 74mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 40ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3457CDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3457CDV-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
