N-channel silicon FET for surface mount applications. Features 60V drain-to-source breakdown voltage and 3.2A continuous drain current. Offers low 100mΩ drain-to-source resistance and fast switching speeds with 10ns turn-on and 10ns fall times. Operates from -55°C to 150°C with 2W maximum power dissipation. Packaged in a compact TSOP with tape and reel for automated assembly.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3458DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3458DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3458DV-T1-E3 to view detailed technical specifications.
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