N-channel silicon FET for surface mount applications. Features 60V drain-to-source breakdown voltage and 3.2A continuous drain current. Offers low 100mΩ drain-to-source resistance and fast switching speeds with 10ns turn-on and 10ns fall times. Operates from -55°C to 150°C with 2W maximum power dissipation. Packaged in a compact TSOP with tape and reel for automated assembly.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3458DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
3.2A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
100mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3458DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3458DV-T1-E3 to view detailed technical specifications.
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