N-channel power MOSFET with 20V drain-source voltage and 6.7A continuous drain current. Features low 27mΩ drain-source on-resistance and 5ns turn-on delay. This surface-mount device, housed in a TSOP package, offers 2W maximum power dissipation and operates from -55°C to 150°C. RoHS compliant and lead-free.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay SI3460BDV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
6.7A
Drain to Source Resistance
27mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
27mR
Dual Supply Voltage
20V
Fall Time
5ns
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
860pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
2A
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Rds On Max
27mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
25ns
Turn-On Delay Time
5ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3460BDV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3460BDV-T1-E3 to view detailed technical specifications.
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