N-Channel MOSFET, 20V Drain-Source Voltage, 8A Continuous Drain Current, 20mΩ Drain-Source Resistance. Features 3ns turn-on delay, 8ns fall time, and 22ns turn-off delay. Surface mountable in a 6-TSOP package with 1.065nF input capacitance. Operates from -55°C to 150°C with 3.6W maximum power dissipation. RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI3464DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 8ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Input Capacitance | 1.065nF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 450mV |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3464DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3464DV-T1-GE3 to view detailed technical specifications.
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