P-channel MOSFET with 20V drain-source voltage and 3.8A continuous drain current. Features low 54mΩ drain-to-source resistance and 1.14W maximum power dissipation. Designed for surface mounting in a compact 6-TSOP package, measuring 3.05mm x 1.65mm x 1mm. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including 10ns turn-on delay and 15ns fall time. RoHS compliant and packaged on tape and reel.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3467DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Resistance | 54mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 54mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3467DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3467DV-T1-E3 to view detailed technical specifications.
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