P-channel MOSFET with 20V drain-source voltage and 5A continuous drain current. Features low 30mΩ drain-source resistance at 10V gate-source voltage and 2.0W power dissipation. Operates across a -55°C to 150°C temperature range, with fast switching times including 10ns turn-on delay and 35ns fall time. Surface-mount TSOP package, RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.14W
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Technical Specifications
Vishay SI3469DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.14W |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000705oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3469DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3469DV-T1-GE3 to view detailed technical specifications.
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