The SI3471DV-T1-E3 is a P-CHANNEL MOSFET from Vishay, packaged in a TSOP package, with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 5.1A and a drain to source breakdown voltage of 12V. The device also features a drain to source resistance of 31mR and a maximum power dissipation of 1.1W. The MOSFET is RoHS compliant and available in quantities of 3000 per reel.
PackageTSOP
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI3471DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 125ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3471DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3471DV-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.