P-channel, small-signal MOSFET for general-purpose applications. Features 12V drain-source voltage and 8A continuous drain current. Offers low 22mΩ drain-source on-resistance and fast switching times with 10ns turn-on and 62ns turn-off delays. Housed in a compact TSOP package, this surface-mount component operates from -55°C to 150°C with a maximum power dissipation of 4.2W. Halogen-free and RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3473CDV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 2.01nF |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 4.2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3473CDV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3473CDV-T1-GE3 to view detailed technical specifications.
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