P-channel MOSFET with 200V drain-source voltage and 750mA continuous drain current. Features low 1.61 Ohm drain-source resistance and fast switching times with 14ns turn-on and 23ns turn-off delays. Packaged in a compact 6-TSOP surface-mount case, this component offers 2W maximum power dissipation and operates across a wide temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3475DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 750mA |
| Drain to Source Resistance | 1.61R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 500pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 1.61R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3475DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3475DV-T1-E3 to view detailed technical specifications.
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