Vishay SI3475DV-T1-GE3 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 750mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.61R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 1.61R |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 500pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 1.61R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 23ns |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI3475DV-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
