P-channel MOSFET, 8V drain-source voltage, 5.3A continuous drain current, and 23mΩ drain-source on-resistance. Features a TSOP package for surface mounting, operating from -55°C to 150°C. Includes fast switching times with turn-on delay of 27ns and fall time of 110ns. RoHS compliant with a maximum power dissipation of 1.1W.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI3499DV-T1-GE3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
5.3A
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
-8V
Drain-source On Resistance-Max
23mR
Fall Time
110ns
Gate to Source Voltage (Vgs)
5V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Nominal Vgs
-350mV
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
23mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-350mV
Turn-Off Delay Time
210ns
Turn-On Delay Time
27ns
Weight
0.000705oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI3499DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3499DV-T1-GE3 to view detailed technical specifications.
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