P-channel MOSFET, 8V drain-source voltage, 5.3A continuous drain current, and 23mΩ drain-source on-resistance. Features a TSOP package for surface mounting, operating from -55°C to 150°C. Includes fast switching times with turn-on delay of 27ns and fall time of 110ns. RoHS compliant with a maximum power dissipation of 1.1W.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI3499DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | -8V |
| Drain-source On Resistance-Max | 23mR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 5V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | -350mV |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -350mV |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 27ns |
| Weight | 0.000705oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3499DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3499DV-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
