Quick Jump:
Technical Specifications
Vishay SI3529DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.95A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 215mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 38ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 205pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.15W |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3529DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3529DV-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
