SI3529DV-T1-GE3

MOSFET N/P-CH 40V 2.5A 6-TSOP

PackageTSOP

MountingSurface Mount

PolarityP-CHANNEL

Power1.15W

Quick Jump:

Vishay SI3529DV-T1-GE3 technical specifications.

Package/Case	TSOP
Continuous Drain Current (ID)	2.5A
Drain to Source Breakdown Voltage	40V
Drain to Source Resistance	215mR
Drain to Source Voltage (Vdss)	40V
FET Type	N and P-Channel
Gate to Source Voltage (Vgs)	20V
Input Capacitance	205pF
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.15W
Mount	Surface Mount
Nominal Vgs	3V
Package Quantity	3000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	1.15W
Radiation Hardening	No
Rds On Max	125mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	TrenchFET®
Threshold Voltage	3V