Dual N-channel and P-channel MOSFET with 30V drain-source voltage. Features low 170mΩ drain-source on-resistance at 10V Vgs, 2.5A continuous drain current, and 830mW power dissipation. Surface mount TSOP package with 1.65mm width, 3.05mm length, and 1mm height. Operates from -55°C to 150°C, with fast switching times including 5ns turn-on delay and 15ns fall time. RoHS compliant and lead-free.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI3590DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.5A
Drain to Source Resistance
170mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
170MR
Fall Time
15ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Mount
Surface Mount
Nominal Vgs
600mV
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
77mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
20ns
Turn-On Delay Time
5ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3590DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3590DV-T1-E3 to view detailed technical specifications.
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