Dual N-channel and P-channel MOSFET with 30V drain-source voltage. Features low 170mΩ drain-source on-resistance at 10V Vgs, 2.5A continuous drain current, and 830mW power dissipation. Surface mount TSOP package with 1.65mm width, 3.05mm length, and 1mm height. Operates from -55°C to 150°C, with fast switching times including 5ns turn-on delay and 15ns fall time. RoHS compliant and lead-free.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI3590DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 170MR |
| Fall Time | 15ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Nominal Vgs | 600mV |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 77mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.000705oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3590DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3590DV-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
