Dual-channel N-channel and P-channel JFET for general-purpose small signal applications. Features a 30V drain-to-source voltage and 2.5A continuous drain current. Offers a low drain-to-source on-resistance of 77mΩ at a nominal gate-to-source voltage of 1.5V. Packaged in a TSOP surface-mount case, this component operates from -55°C to 150°C and is RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI3590DV-T1-GE3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 135mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 77mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.5V |
| Turn-On Delay Time | 5ns |
| Weight | 0.000705oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3590DV-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI3590DV-T1-GE3 to view detailed technical specifications.
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