SI3812DV-T1-E3

N-CH MOSFET 20V 2A 125mR TSOP Surface Mount

N-channel MOSFET, 20V Drain-Source Voltage (Vdss), 2A Continuous Drain Current (ID), and 125mΩ Drain-to-Source Resistance (Rds On Max). This surface-mount device features a 6-TSOP package with dimensions of 3.05mm length, 1.65mm width, and 1mm height. It offers fast switching characteristics with a 10ns turn-on delay, 14ns turn-off delay, and 30ns fall time. Maximum power dissipation is 830mW, operating temperature range is -55°C to 150°C, and it is RoHS compliant.

PackageTSOP

MountingSurface Mount

PolarityN-CHANNEL

Power830mW

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Technical Specifications

Vishay SI3812DV-T1-E3 technical specifications.

General

Package/Case	TSOP
Continuous Drain Current (ID)	2A
Drain to Source Resistance	125mR
Drain to Source Voltage (Vdss)	20V
Fall Time	30ns
Gate to Source Voltage (Vgs)	12V
Height	1mm
Length	3.05mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	830mW
Mount	Surface Mount
Number of Channels	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	830mW
Rds On Max	125mR
RoHS Compliant	Yes
Series	LITTLE FOOT®
Turn-Off Delay Time	14ns
Turn-On Delay Time	10ns
Weight	0.000705oz
Width	1.65mm