N and P-channel dual FET for general-purpose small signal applications. Features 20V drain-source voltage and 1.4A continuous drain current. Offers low 300mΩ drain-source on-resistance and fast 18ns turn-off delay. Packaged in a compact TSOP surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI3850ADV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
1.4A
Drain to Source Resistance
640mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
640MR
Fall Time
34ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.08W
Mount
Surface Mount
Nominal Vgs
1.5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
300mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.5V
Turn-Off Delay Time
18ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI3850ADV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3850ADV-T1-E3 to view detailed technical specifications.
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