P-channel MOSFET featuring 20V drain-source breakdown voltage and 1.6A continuous drain current. Surface mountable in a 6-TSOP package, this component offers 200mΩ drain-source resistance at a nominal gate-source voltage of -500mV. Operating temperature range spans -55°C to 150°C with a maximum power dissipation of 830mW. Fast switching characteristics include a 11ns turn-on delay and 19ns turn-off delay.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power830mW
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Technical Specifications
Vishay SI3853DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 34ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Nominal Vgs | -500mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
| Threshold Voltage | -500mV |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3853DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3853DV-T1-E3 to view detailed technical specifications.
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