P-channel MOSFET with 20V drain-source breakdown voltage and 3.9A continuous drain current. Features 51mΩ maximum drain-source on-resistance at 4.5V gate-source voltage. Operates within a -55°C to 150°C temperature range, with 1.1W maximum power dissipation. Supplied in a TSOP surface-mount package, 3000 units per tape and reel. RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI3867DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 51mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 51mR |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 51mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.4V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3867DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3867DV-T1-E3 to view detailed technical specifications.
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