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Technical Specifications
Vishay SI3900DV-T1 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 830mW |
| RoHS Compliant | No |
| Series | SI3 |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000705oz |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI3900DV-T1 Datasheet
Download the complete datasheet for Vishay SI3900DV-T1 to view detailed technical specifications.
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