N-Channel Silicon FET, 2-Element, Surface Mount TSOP package. Features 20V Drain to Source Breakdown Voltage (Vdss) and 2A Continuous Drain Current (ID). Offers 125mR Max Drain-Source On Resistance (Rds On) and 600mV Threshold Voltage. Operates from -55°C to 150°C with 830mW Max Power Dissipation. RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power830mW
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Technical Specifications
Vishay SI3900DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
125mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
125mR
Fall Time
30ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
830mW
Mount
Surface Mount
Nominal Vgs
600mV
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
830mW
Radiation Hardening
No
Rds On Max
125mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
14ns
Turn-On Delay Time
10ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3900DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3900DV-T1-E3 to view detailed technical specifications.
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