The SI3915DV-T1-E3 is a P-channel MOSFET from Vishay with a drain to source breakdown voltage of -12V and a continuous drain current of 2A. It features a drain to source resistance of 120mR and a power dissipation of 830mW. The device operates within a temperature range of -55°C to 150°C and is packaged in a TSOP package, available in quantities of 3000 on tape and reel.
PackageTSOP
PolarityP-CHANNEL
Power830mW
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Technical Specifications
Vishay SI3915DV-T1-E3 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 120mR |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 830mW |
| Turn-Off Delay Time | 33ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI3915DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3915DV-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.