N-Channel Junction Field-Effect Transistor (JFET) with 30V Drain-to-Source Voltage (Vdss) and 2.5A Continuous Drain Current (ID). Features low 105mR Drain-to-Source Resistance (Rds On Max) and operates with a Gate-to-Source Voltage (Vgs) up to 20V. This surface mount component, packaged in TSOP, offers fast switching with a 7ns turn-on delay and 9ns fall time. It supports a maximum power dissipation of 1.15W and is RoHS compliant, suitable for operation between -55°C and 150°C.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power1.15W
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Technical Specifications
Vishay SI3948DV-T1-E3 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.5A
Drain to Source Resistance
105mR
Drain to Source Voltage (Vdss)
30V
Fall Time
9ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1mm
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.15W
Mount
Surface Mount
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.15W
Radiation Hardening
No
Rds On Max
105mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
13ns
Turn-On Delay Time
7ns
Weight
0.000705oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI3948DV-T1-E3 Datasheet
Download the complete datasheet for Vishay SI3948DV-T1-E3 to view detailed technical specifications.
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