N-channel MOSFET, 40V Drain-Source Voltage (Vdss), 27.2A Continuous Drain Current (ID), and 4.5mR Drain-Source On Resistance (Rds On Max). Features include a 2.5V Threshold Voltage, 4.2nF Input Capacitance, 42ns Turn-On Delay Time, and 28ns Fall Time. Packaged in an 8-pin SOIC N surface mount package, this component operates from -55°C to 150°C and is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4122DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
27.2A
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
4.5MR
Fall Time
28ns
Gate to Source Voltage (Vgs)
25V
Height
1.55mm
Input Capacitance
4.2nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
45ns
Turn-On Delay Time
42ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4122DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4122DY-T1-GE3 to view detailed technical specifications.
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