
N-channel MOSFET, 30V Vdss, 14A continuous drain current, and 14.5mΩ drain-source resistance. Features low on-resistance, 9ns turn-on delay, and 14ns turn-off delay. Packaged in an 8-pin SOIC surface-mount case, this component operates from -55°C to 150°C with a maximum power dissipation of 5W. RoHS compliant and lead-free.
Vishay SI4134DY-T1-E3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 14.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 14mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 846pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4134DY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.