N-Channel Silicon JFET, surface mount, featuring a 20V Drain-to-Source Voltage (Vdss) and 46A Continuous Drain Current (ID). This component offers a low Drain to Source Resistance of 1.95mR and a Threshold Voltage of 1V. Designed for surface mounting in an SO package, it operates across a wide temperature range from -55°C to 150°C with a Max Power Dissipation of 7.8W. It is HALOGEN FREE and ROHS COMPLIANT.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4136DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
46A
Drain to Source Resistance
1.95mR
Drain to Source Voltage (Vdss)
20V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
4.56nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
7.8W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
2mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
50ns
Turn-On Delay Time
34ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4136DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4136DY-T1-GE3 to view detailed technical specifications.
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