N-channel MOSFET transistor for surface mount applications. Features 40V drain-source voltage (Vdss) and 36A continuous drain current (ID). Offers low 2.7mR drain-to-source resistance and 3.3mR Rds On Max. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 7.8W. Includes 4.23nF input capacitance and fast switching times with 25ns turn-on and 35ns turn-off delay.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4154DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
36A
Drain to Source Resistance
2.7mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
3.3MR
Fall Time
35ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
4.23nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
7.8W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
35ns
Turn-On Delay Time
25ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4154DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4154DY-T1-GE3 to view detailed technical specifications.
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