N-channel Silicon TrenchFET® MOSFET, surface mountable in an SOP-8 package. Features a continuous drain current of 24A, drain-source voltage of 30V, and a low drain-source on-resistance of 6mΩ. Operates with a gate-source voltage up to 20V and a threshold voltage of 2.2V. Includes a maximum power dissipation of 6W and a maximum operating temperature of 150°C. This component is RoHS compliant and HALOGEN FREE.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4156DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.2V |
| Turn-On Delay Time | 25ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4156DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4156DY-T1-GE3 to view detailed technical specifications.
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