N-Channel Silicon Field-Effect Transistor (FET) for small signal applications. Features a 30V Drain-Source Voltage (Vdss) and a maximum continuous drain current of 30.5A. Offers a low Drain-Source On-Resistance (Rds On) of 3.9mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 6.5W. Packaged in an SO-8 surface-mount case and is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4166DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
30.5A
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3.9MR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
2.73nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
3.9mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.2V
Turn-Off Delay Time
35ns
Turn-On Delay Time
30ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4166DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4166DY-T1-GE3 to view detailed technical specifications.
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