N-Channel Silicon JFET, Surface Mount, SOIC-8 package. Features 30V Drain-Source Voltage (Vdss), 12A Continuous Drain Current (ID), and a maximum Drain-Source On Resistance (Rds On) of 21mR. Offers a nominal Gate-Source Voltage (Vgs) of 1.4V and a Threshold Voltage of 2.8V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 5W. Includes fast switching characteristics with a turn-on delay time of 20ns and a fall time of 10ns.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.4W
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Technical Specifications
Vishay SI4178DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
12A
Drain to Source Resistance
17mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
21mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
Height
1.55mm
Input Capacitance
405pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Nominal Vgs
1.4V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.4W
Radiation Hardening
No
Rds On Max
21mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.8V
Turn-Off Delay Time
12ns
Turn-On Delay Time
20ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4178DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4178DY-T1-GE3 to view detailed technical specifications.
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