N-channel MOSFET with 20V Drain-Source Voltage (Vdss) and 35.8A Continuous Drain Current (ID). Features low 2.6mR Drain-to-Source Resistance (Rds On Max) and 6W Max Power Dissipation. Operates from -55°C to 150°C with a 2.4V nominal Gate-Source Voltage (Vgs). Packaged in an 8-pin SOIC for surface mounting, this component offers fast switching with a 13ns Fall Time.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4186DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 35.8A |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.63nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6W |
| Mount | Surface Mount |
| Nominal Vgs | 2.4V |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.6mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 29ns |
| Weight | 0.019048oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4186DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4186DY-T1-GE3 to view detailed technical specifications.
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