N-channel MOSFET, 100V drain-source breakdown voltage, 20A continuous drain current, and 8.8mΩ maximum drain-source on-resistance. Features include 11ns fall time, 12ns turn-on delay, and 40ns turn-off delay. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 7.8W. Packaged in an 8-SOIC surface-mount package, this RoHS compliant component is supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power7.8W
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Technical Specifications
Vishay SI4190DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
8.8mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
8.8MR
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
7.8W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
7.8W
Radiation Hardening
No
Rds On Max
8.8mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
40ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI4190DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4190DY-T1-GE3 to view detailed technical specifications.
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