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Technical Specifications
Vishay SI4200DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 415pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4200DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4200DY-T1-GE3 to view detailed technical specifications.
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