Dual N-Channel MOSFET, 20V Gate-Source Voltage, 30V Drain-Source Voltage. Features 14mΩ maximum drain-source on-resistance and 12.1A continuous drain current. Surface mountable in an SO package, this component offers a fast 8ns fall time and 710pF input capacitance. Operating temperature range from -55°C to 150°C with 3.7W maximum power dissipation. RoHS compliant.
PackageSO
Voltage30V
Current75A
MountingSurface Mount
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Technical Specifications
Vishay SI4202DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
12.1A
Current
75A
Drain to Source Resistance
17mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
14MR
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
710pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.7W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
14mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Voltage
30V
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI4202DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4202DY-T1-GE3 to view detailed technical specifications.
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