N-Channel Silicon FET, 2-Element, Surface Mount SOP-8 package. Features 30V Drain to Source Breakdown Voltage, 8.5A Continuous Drain Current, and 19.5mR Max Drain-Source On Resistance. Operates from -55°C to 150°C with 3.1W Max Power Dissipation. Includes 2 N-Channel elements, 2.5V Threshold Voltage, and 660pF Input Capacitance. HALOGEN FREE AND ROHS COMPLIANT.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay SI4214DDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
19.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
19.5mR
Fall Time
12ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
660pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Rds On Max
19.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
18ns
Turn-On Delay Time
14ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4214DDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4214DDY-T1-GE3 to view detailed technical specifications.
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